Electrical Properties of Polytypic Mg Doped GaAs Nanowires
نویسندگان
چکیده
منابع مشابه
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In this paper, the optical and electrical properties of Mg-doped AlN nanowires are discussed. At room temperature, with the increase of Mg-doping concentration, the Mg-acceptor energy level related optical transition can be clearly measured, which is separated about 0.6 eV from the band-edge transition, consistent with the Mg activation energy in AlN. The electrical conduction measurements indi...
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ژورنال
عنوان ژورنال: Journal of Nanomaterials
سال: 2016
ISSN: 1687-4110,1687-4129
DOI: 10.1155/2016/9451319